Submicron size metal electrodes have important applications in High Electron Mobility Transistor(HEMT) and many semiconductor electronics, whose fabrication, playing a significant role in the device performance, is the key technology in device processing. In this paper, suitable rotation speed of gluing, baking temperature(180 ℃) and time duration are determined，enabling reducing the air bubbles produced after the electron beam exposure significantly. A suitable exposure dose of 550 μC/cm2 is found by the electron beam exposure and development to the Polymethyl Methacrylate/dimethyglutarimide (PMMA/PMGI) double glue. By tuning the ratio of the developing solution and controlling a reasonable range of developing time, a smooth and complete exposure pattern of PMMA/PMGI bilayer photoresist is obtained. Using the electron beam lithography to a bilayer photoresist, a metal electrode with a width of 200 nm is fabricated. The results lay a solid foundation for the preparation of high-performance semiconductor devices.