Based on Silicon Germanium Bipolar Complementary Metal Oxide Semiconductor(SiGe BiCMOS) process technology, several terahertz filters with Substrate Integrated Waveguide(SIW) structures are designed. The measured results show that the deviation of the center frequency is very small compared with the design. The center frequencies and bandwidths of the filters are 20 GHz@139 GHz, 20 GHz@168 GHz and 26 GHz@324 GHz, respectively. The insertion losses of the filters on the center frequency are -6 dB@140 GHz, -5.5 dB@170 GHz and -5 dB@330 GHz, respectively.