Neutron is the predominant radiation source in terrestrial cosmic rays and nuclear explosion. Neutron can indirectly induce single event effect by secondary reaction, which will significantly reduce the reliability of electronic components. A neutron saturated cross section prediction model is proposed for a Static Random Access Memory(SRAM) cell designed by commercial Si technology. Through a circuit-level simulation model, the radiation effects can be shown as the SPICE-simulated curves of Linear Energy Transfer(LET) versus the corresponding affected distances, which are used for upset cross section prediction. The proposed method is simple and effective. Its calculated results are in good agreement with experimentally measured results reported for SRAM fabricated in 130 nm bulk silicon process.