塑封铜引线集成电路开封方法
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Decapsulation method with plastic encapsulated integrated circuit of copper wire
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    摘要:

    在集成电路高速发展的时代,内引线为铜的集成电路因为低廉的价格和性能方面的优势,将越来越多地被制造和改进,破坏性物理分析(DPA)中也将会遇到大量的塑封铜引线集成电路,这类器件开封容易引起铜引线、键合点的腐蚀等问题。对这类器件研究后的开封方法是:激光开封后一定比例的混酸腐蚀能使铜线和键合点完好保留,芯片表面无塑封料残留。本文提供了一种对塑封铜引线集成电路进行开封的可靠方法。

    Abstract:

    Plastic encapsulated integrated circuit of copper wire will be made and improved more popularly in the development of high speed integrated circuit for its low price and performance advantages. In the Destructive Physical Analysis(DPA), a lot of this type of integrated circuit will be encountered, which will lead to corrosion problems on copper wire and bonding points during decapsulation. The proper decapsulation method is as follows: after laser decapsulation,using mixed acid to erode plastic can keep the copper wire and bonding points well without plastic residual on the surface of chip. The experiments provide a reliable way to decapsulate integrated circuit of copper wire.

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龚国虎,梁栋程,梁 倩.塑封铜引线集成电路开封方法[J].太赫兹科学与电子信息学报,2015,13(6):1005~1008

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  • 收稿日期:2014-10-15
  • 最后修改日期:2014-12-11
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  • 在线发布日期: 2015-12-30
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