The radiation responses of several new non-volatile Random Access Memory safety(RAMs)，namely Ferroelectric Random Access Memory(FeRAM)，Magnetic Random Access Memory(MRAM)，Phase Change Random Access Memory(PCRAM) and Resistive Random Access Memory(RRAM) are investigated. The total dose effect and single event effect of each kind of these new non-volatile RAMs are summarized and analyzed. A conclusion is drawn that the radiation response of these new non-volatile RAMs is determined by the radiation response of the Complementary Metal Oxide Semiconductor(CMOS) peripheral circuit. This paper serves as a reference for the research and development of anti-radiation non-volatile RAM.