With the development of space technology and nuclear physics technology, the demand of high voltage power circuit is becoming stronger and stronger. A design of an anti-radiation high voltage Metal-Oxide-Semiconductor Field-Effect-Transistor(MOSFET) driver is presented. The circuit is designed based on 0.5 m BCD(namely Bipolar-Complementary Metal Oxide Semiconductor(CMOS)-Double-Diffused Metal-Oxide Semiconductor(DMOS) technique. The circuit adopts special structure and the layout design for radiation hardening the latch up effect, the field area and electrical parameters. The 300 krad(Si) is used for the design of the circuit. The working voltage of the circuit can reach 40 V，and it is compatible with Transistor–Transistor Logic(TTL)/CMOS input. The output peak current is 1.5 A. It can be widely usedin aerospace and nuclear physics experiments and other power driving parts.