A novel protective technology based on high voltage gate driver has been developed to overcome false output in the high speed operation. The novel technology includes an high frequency protection structure. Compared with conventional gate driver circuit, the new technology achieves better resistivity encountering risks. Based on Central Semiconductor Manufacturing Corporation(CSMC) 1 μm 600 V Boot Configuration Data(BCD) technology platform, this paper uses the Hspice simulation software of Cadence to verify the problem, and gives the improved project. The simulation results show that the novel improvement can reduce the pulse width from 100 ns to 10 ns in the high voltage level shift circuit.