The total dose radiation effect will lead to the shifting of threshold voltage and increasing of leakage current of Silicon-On-Insulator Metal-Oxide Semiconductor Field Effect Transistors(SOI MOSFET) device. The increase of leakage current of Shallow Trench Isolation(STI) is the main factor of device degradation, which will form parasitic transistors from drain to source. In order to study the total dose radiation degradation characteristics of 130 nm Partially Depleted(PD) SOI MOSFET device, a Simulation Program with Integrated Circuit Emphasis(SPICE) model including total dose radiation effect is established by using Verilog-A language. Based on the BSIM SOI standard process model, the SPICE model of STI edge leakage current is added, and the variation of equivalent gate width and gate oxygen thickness caused by radiation trap charge is considered. By comparing with the degradation characteristics of devices with different aspect ratios under different leakage voltages, the model can accurately reflect the changes of current characteristics before and after radiation, and provide a reference for radiation resistance design of devices.