There are some disadvantages in the simulation test of transient dose rate radiation effect, such as limited test resources, strong environmental electromagnetic interference and low repeatability. There are some disadvantages, such as limited test resources, strong electromagnetic interference and low repeatability. In this paper, the pulsed laser simulation test technology of transient dose rate effect is developed, and a complete and fine ground test system is constructed with 1 064 nm laser. The transient dose rate effects of different process nodes, different channel types and different substrates are experimentally studied by using this system. The experimental results show that under the same conditions, the photocurrent of bulk silicon devices is more than 10 times larger than that of Silicon-On-Insulator(SOI), and the photocurrent is more affected by the source-drain voltage than SOI.