2~6 GHz紧凑型、高效率GaN MMIC功率放大器
作者:
作者单位:

中国电子科技集团公司 第十三研究所,河北 石家庄 050051

作者简介:

邬佳晟(1990-),男,工程师,主要研究方向为微波、毫米波集成电路的设计制造.email:757400627@qq.com.
蔡道民(1977-),男,高级工程师,主要研究方向为功率芯片、光电器件.

通讯作者:

基金项目:

国家核心器件资助项目(2017ZX03001024)

伦理声明:



2~6 GHz compact GaN power amplifier MMICs with high PAE
Author:
Ethical statement:

Affiliation:

The 13th Research Institute,CETC,Shijiazhuang Hebei 050051,China

Funding:

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
    摘要:

    基于0.25 μm SiC衬底的GaN高电子迁移率晶体管(HEMT)工艺,根据有源器件的Gmax和输出功率密度,选择末级功率器件尺寸并确定其最优阻抗;采用三级放大器,其栅宽比为1:4:16,实现高功率增益和高效率;利用等Q匹配技术,把偏置电路融入匹配电路中,实现简单、低损耗和宽带阻抗变换;借助电磁场寄生参数提取技术实现紧凑型芯片版图,尺寸为2.8 mm×2.0 mm。测试结果表明,偏置条件漏极电压UD=28 V、UG=-2.2 V,在2~6 GHz频率范围内,功率放大器增益大于24 dB,饱和输出功率大于43 dBm,功率附加效率大于45%,可广泛应用于电子对抗和电子围栏等领域。

    Abstract:

    Based on the 0.25 μm SiC substrate GaN High Electron Mobility Transistor(HEMT) process, the final power device size is selected and its optimal impedance is determined by the Gmax and the unit output power density of the active device. The tertiary amplifier is adopted, and its gate width ratio is 1:4:16 to achieve high power gain and high efficiency. By using the equal-Q-matching technique,and integraing the bias circuit into the matching circuit, an impedance transformation is realized with simple, low loss and broadband. With the help of the extraction of parasitic parameters in electromagnetic fields, the compact chip is realized. The chip size of the Monolithic Microwave Integrated Circuit(MMIC) amplifier is 2.8 mm×2.0 mm. The test results show that in the 2~6 GHz frequency range, and under the conditions of the drain voltage of 28 V, the gate voltage -2.2 V,and continuous wave, the large signal gain of the MMIC amplifier is greater than 24 dB, the saturation output power is greater than 43 dBm, and the Power Additional Efficiency(PAE) is greater than 45%. The proposed paver amplifier can be widely used in electronic countermeasures and electronic fence.

    参考文献
    相似文献
    引证文献
引用本文

邬佳晟,蔡道民.2~6 GHz紧凑型、高效率GaN MMIC功率放大器[J].太赫兹科学与电子信息学报,2023,(8):1054~1058

复制
分享
文章指标
  • 点击次数:
  • 下载次数:
  • HTML阅读次数:
历史
  • 收稿日期:2023-01-12
  • 最后修改日期:2023-04-09
  • 录用日期:
  • 在线发布日期: 2023-08-28
  • 出版日期: