High-voltage pulses signal with slow rising-fast falling edge was obtained based on the character of Metal-Oxide-Semiconductor type Field Effect Transistor(MOSFET) that drain current was proportional to the gate voltage during turn-on procedure. Adopting gate resistance increased the rise time of edge, and adopting low output resistance of driver reduced the fall time. The maximum amplitude of output pulse reached 800 V and the fall time was 15 ns with the load of 50 Ω.