To study the Single Event Upset(SEU) mechanism in different regions of Integrated Circuits (IC)，a SEU mapping system was established on heavy ion micro-beam facility in Beijing HI-13 Tandem Accelerator. It produces micron-resolution maps when single-event upsets occur during ion irradiation of integrated circuits. From these upset maps，the identity and size of a circuit’s upset-prone components can be directly determined. Utilizing this system，a 2 kbit Static Random Access Memory (SRAM)(made in China) SEU map was obtained，which accorded well with the theoretical results and the earlier experiment results.