A radiation-hardened SOI-SRAM-based Field Programmable Gate Array(FPGA) VS1000 is designed and verified. The VS1000 FPGA contains 192 reconfigurable Logic Blocks(LB), 56 reconfigurable Input/Output logic Blocks(IOBs), some routing channel blocks(CHBs) and programming blocks(PGMs). An LB consists of 2 Logic Cells(LCs) based on multi-mode 4-input Look-Up-Table(LUT), which increases logic density by 12% compared to a traditional 4-input LUT. PGM adopts direct-access programming point scheme and provides a more flexible partial configuration. Programming Point(PP) is specially designed using full body-tied techniques to improve radiation-hardened performance of chip. The VS1000 FPGA is designed and fabricated with a 0.5 μm Partial-Depletion Silicon-On-Insulator(PDSOI) logic process at the 58th institute of CETC. The radiation test results indicate that VS1000 FPGA bears total dose tolerance of 1×105 rad(Si), dose rate survivability of 1.5×1011 rad(Si)/s and neutron fluence immunity of 1×1014 n/cm2.