The characteristics of anodic bonding at low temperature are researched. The effects on bonding for three different processing modes of silicon, including hydrophilic treatment, hydrophobic treatment and no surface treatment, are studied. The silicon wafers are dipped into Deionized Water(DIW) for different times to investigate the effect of the number of H-terminations and SiO2 molecules on silicon surface for bonding. The results show that the best bond quality is achieved by dropping the silicon wafer with hydrophilic treatment in DIW for 1 h. Anodic bonding experiments at different drying time are designed. The bubble amount and size will decrease at 100 °C after drying for 30 min. According to the results of bonding morphology obtained by different processing conditions, the bubbles can be minimized or eliminated through controlling the microscopic state on silicon surface.