文章检索

  • 检索
  • 检索词:
  • 高级检索
您是今天第 802位访问者
您是第 7239301 位访问者
引用本文:
【打印本页】   【下载PDF全文】   查看/发表评论  【EndNote】   【RefMan】   【BibTex】
←前一篇|后一篇→ 过刊浏览    高级检索
本文已被:浏览 7702次   下载 7122 本文二维码信息
码上扫一扫!
分享到: 微信 更多
半导体器件辐射电离效应的激光模拟方法
李 沫,孙 鹏,宋 宇,代 刚,张 健
作者单位
李 沫 a.Institute of Electronic Engineeringb.Microsystems and Terahertz Research CenterChina Academy of Engineering PhysicsMianyang Sichuan 621999China 
孙 鹏 a.Institute of Electronic Engineeringb.Microsystems and Terahertz Research CenterChina Academy of Engineering PhysicsMianyang Sichuan 621999China 
宋 宇 a.Institute of Electronic Engineeringb.Microsystems and Terahertz Research CenterChina Academy of Engineering PhysicsMianyang Sichuan 621999China 
代 刚 a.Institute of Electronic Engineeringb.Microsystems and Terahertz Research CenterChina Academy of Engineering PhysicsMianyang Sichuan 621999China 
张 健 a.Institute of Electronic Engineeringb.Microsystems and Terahertz Research CenterChina Academy of Engineering PhysicsMianyang Sichuan 621999China 
摘要:
因对半导体器件进行安全、快捷、无损伤的辐射效应研究及验证的迫切需求,激光模拟辐射电离效应方法应运而生,并得到了国外科研界的推动和认可。相比于大型地面辐射模拟装置,激光模拟方法具有许多独特优势,可为深入认识半导体器件辐射效应,开展有针对性的抗辐射加固设计提供重要的补充手段,其研究在理论和应用方面均具有重要意义。本文简要叙述了γ射线、激光与半导体器件相互作用产生电离效应的主要机理,归纳了激光模拟的物理基础和主要特点,总结了国内外发展的情况,深入分析了当前研究存在的问题,并提出了开展研究可以采取的手段和方法。最后展望了未来值得进一步探索的研究内容和方向。
关键词:  半导体器件  辐射电离效应  激光模拟
DOI:10.11805/TKYDA201501.0160
分类号:
基金项目:中国工程物理研究院院长基金资助项目(2014-1-100)
Basic principles and research progress of laser simulation of ionization radiation effect in semiconductor devices
LI Mo1,2, SUN Peng1,2, SONG Yu1,2, DAI Gang1,2, ZHANG Jiana1,2
1.a.Institute of Electronic Engineering;2.b.Microsystems and Terahertz Research Center,China Academy of Engineering Physics,Mianyang Sichuan 621999,China
Abstract:
According to the requirements of safe, simple and nondestructive radiation effect investigation of semiconductor devices, the method of laser simulation was proposed and greatly promoted. Compared with large-scale facilities, laser simulation has various unique advantages. It helps understand the ionization radiation effect in depth and is an effective low-cost, table-top supplement for the hardness assurance. Its research shows great significance for radiation effect study in both theory and practice. In this paper, the basic principles of the interactions of γ and laser with semiconductor devices are firstly presented. Then the physical basics and characteristics of laser simulation are given, with the research progress review followed. The existing problems of current research are deeply discussed providing with feasible research approaches. In the end, necessary research contents in the future are proposed.
Key words:  semiconductor devices  ionization radiation effect  laser simulation

分享按钮