子阱及非对称势垒对GaN RTD电学特性的影响
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科学挑战专题资助项目(TZ2017003);中国工程物理研究院微系统与太赫兹研究中心专项资助项目(MT2015-11-08);中国工程物理研究院—四川大学协同创新联合基金资助项目(CX2014005)

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Influence of sub-quantum-well and asymmetric quantum-barrier structures on the electrical characteristics of GaN RTD
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    摘要:

    利用Silvaco软件对Al0.2Ga0.8N/GaN共振隧穿二极管(RTD)进行仿真,重点研究了InGaN子量子阱结构及相应非对称势垒结构设计对其电流特性的影响。对比分析了子量子阱结构中InGaN的In组分和子阱厚度对RTD微分负阻(NDR)特性的影响,得出了提升器件性能的最佳参数范围。为了克服Al0.2Ga0.8N/GaN RTD势垒低对器件电流峰谷比(PVCR)的影响,在子量子阱结构的基础上引入了非对称势垒结构设计,通过改变收集区侧势垒的高度和厚度,将AlGaN/GaN的Ip和PVCR由基本结构的0.42 A和1.25,提高到了0.583 A和5.01,实现了器件性能的优化,并为今后的器件研制提供了设计思路。

    Abstract:

    The influence of InGaN sub-quantum-well and asymmetric quantum-barrier structures on Al0.2Ga0.8N/GaN Resonant Tunneling Diodes(RTD) are studied based on Silvaco simulator. Theoretical investigation reveals that there are appropriate ranges of the In composition and thickness for InGaN sub-quantum-well which can obviously improve the Negative Differential Resistance(NDR) characteristics of RTD. It is also found that by introducing asymmetric quantum-barrier structures in the sub-quantum-well GaN RTD, the I–U characteristic of Peak-to-Valley Current Ratio(PVCR) can be further improved. Numerical simulation shows that RTD with both InGaN sub-quantum-well and asymmetric quantum-barrier structures exhibits the peak current (Ip) and PVCR of 0.583 A and 5.01 respectively, superior to that of the conventional Al0.2Ga0.8N/GaN RTD without sub-quantum-well having Ip of 0.42 A and PVCR of 1.25. The introducing of improved new quantum structures for the low Al composition AlGaN/GaN RTD has provided one of the solutions to solve the contradiction between the device electrical properties and its actual manufacture for the future terahertz applications.

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苏 娟,谭 为,高 博.子阱及非对称势垒对GaN RTD电学特性的影响[J].太赫兹科学与电子信息学报,2017,15(5):855~860

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  • 收稿日期:2016-12-07
  • 最后修改日期:2017-03-08
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  • 在线发布日期: 2017-11-03
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