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偏置条件对双极晶体管位移辐射损伤的影响
刘 莉,董 磊,刘超铭,李兴冀,杨剑群,马国亮
作者单位
刘 莉 China Aerospace Components Engineering CenterChina Academy of Space TechnologyBeijing 100029China 
董 磊 1.School of Materials Science and EngineeringHarbin Institute of TechnologyHarbin Heilongjiang 150001China2.School of Physics and Electronic EngineeringHarbin Normal UniversityHarbin Heilongjiang 150025China 
刘超铭 School of Materials Science and EngineeringHarbin Institute of TechnologyHarbin Heilongjiang 150001China 
李兴冀 School of Materials Science and EngineeringHarbin Institute of TechnologyHarbin Heilongjiang 150001China 
杨剑群 School of Materials Science and EngineeringHarbin Institute of TechnologyHarbin Heilongjiang 150001China 
马国亮 School of Materials Science and EngineeringHarbin Institute of TechnologyHarbin Heilongjiang 150001China 
摘要:
选用35 MeV Si离子,针对NPN及PNP型双极晶体管(BJT)进行辐照实验,探究重离子辐照条件下双极晶体管辐射损伤及缺陷在不同发射结偏置条件下的影响规律。通过原位测试不同偏置条件的双极晶体管电流增益等参数随辐照注量的变化关系,研究了发射结偏置条件对双极晶体管辐射损伤的影响。此外,采用深能级瞬态谱(DLTS)针对辐照后的双极晶体管进行了测试,得到了双极晶体管内的辐射缺陷信息。基于电性能测试和DLTS分析结果可以看出,双极晶体管辐照时所施加的偏置条件能够明显地影响器件的电性能参数和器件内的深能级缺陷浓度,不同类型的缺陷对于电性能的影响也存在明显差异。
关键词:  双极晶体管  重离子辐照  位移辐射  深能级缺陷
DOI:10.11805/TKYDA201705.0874
分类号:
基金项目:国家自然科学基金资助项目(61404038,11205038);黑龙省江博士后科学基金资助项目(LBH-Z14073);中央基本科研业务费专项资金资助项目(HIT. NSRIF. 2015001)
Effect of displacement radiation damage on bipolar junction transistors under various bias conditions
LIU Li1, DONG Lei2,3, LIU Chaoming4, LI Xingji4, YANG Jianqun4, MA Guoliang4
1.China Aerospace Components Engineering Center,China Academy of Space Technology,Beijing 100029,China;2.1.School of Materials Science and Engineering,Harbin Institute of Technology,Harbin Heilongjiang 150001,China;3.2.School of Physics and Electronic Engineering,Harbin Normal University,Harbin Heilongjiang 150025,China;4.School of Materials Science and Engineering,Harbin Institute of Technology,Harbin Heilongjiang 150001,China
Abstract:
35 MeV Si ion is adopted as the irradiation source to research the displacement radiation damage and defects on NPN and PNP Bipolar Junction Transistors(BJTs) under various bias cases. The changing of electrical parameters of BJTs is in situ measured with increasing irradiation fluence of 35 MeV Si ions. By using Deep Level Transient Spectroscopy(DLTS),deep level defects in the bipolar junction transistors under various bias conditions are measured after irradiation. Based on the in situ electrical measurement and DLTS spectra,it is clearly that the bias conditions could affect the concentration of deep level defects,and the radiation damage induced by heavy ions. Different types of defects give different contributions to the electrical performance degradation. The vacancy related defects(U2(-/0) and U2(+/0)) can give more obvious contributions to the current gain degradation than other defects.
Key words:  bipolar junction transistor  heavy ions  displacement radiation  deep level defects

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