电子束实现210 nm栅长115 GHz GaAs基mHEMT器件
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国家自然科学基金-面上资助项目(61474102)

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210 nm T-gates of GaAs-based HEMT with fmax=115 GHz by one-step E-beam lithography approach
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    摘要:

    为了获得T型栅应变高电子迁移率晶体管(mHEMT)器件,利用电子束(Electron beam,E-beam)光刻技术制备了210 nm栅长,减小mHEMT器件栅极的寄生电容和寄生电阻。采用PMMA A4/ PMMA-MMA/PMMA A2三层胶电子束直写的方法定义了210 nm栅长T型栅极。InAlAs/ InGaAs异质结GaAs-mHEMT器件的直流特性和高频特性分别通过Agilent B1500半导体参数分析仪和Agilent 360 B矢量网络分析仪测试。直流测试结果显示,210 nm栅长InAlAs/InGaAs沟道GaAs-mHEMT单指器件的最大有效输出跨导(gm:max)为195 mS/mm,器件最大沟道电流160 mA/mm。射频测试结果显示,电流增益截至频率(fT)和最高振荡频率(fmax)分别为46 GHz和115 GHz。同时欧姆电极特性和栅极漏电特性也被表征,其中栅极最大饱和漏电流密度小于1×10-8 A/μm。

    Abstract:

    A conventional tri-layer resist structure which consists of PMMA A4/PMMA-MMA/PMMA A2 is adopted to pattern the 210 nm T-gate resist profile in a single lithographic step and a single development step,in order to fabricate the T-shaped gate InAlAs/InGaAs metamorphic High Electron Mobility Transistors(mHEMTs) on a GaAs substrate. The DC and microwave performance of the device are characterized on wafer by an Agilent B1500 semiconductor parameter analyzer and an Agilent 360 B Vector Network Analyzer under room temperature,respectively. The mHEMT device shows the DC output characteristics having an extrinsic maximum transconductance gm:max of 195 mS/mm and the full channel current of 160 mA/mm. The cut-off frequency fT and the maximum oscillation frequency fmax for the mHEMT device with gate width of 50 μm are 46 GHz and 115 GHz,respectively. Meanwhile,work has also been carried out to determine the quality of the Ti/Pt/Au Schottky contact to InAlAs with remarkably small gate leakage current in the orderof 1×10-8 A/μm,which is extremely useful for the reduction of shot noise and the LNA applications.

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曾建平,安 宁,李志强,李 倩,唐海林,刘海涛,梁 毅.电子束实现210 nm栅长115 GHz GaAs基mHEMT器件[J].太赫兹科学与电子信息学报,2018,16(1):17~20

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  • 收稿日期:2016-12-08
  • 最后修改日期:2017-02-20
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  • 在线发布日期: 2018-03-06
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