基于肖特基二极管的670 GHz四次谐波混频器设计
作者:
作者单位:

作者简介:

通讯作者:

基金项目:

伦理声明:



Design of a 670 GHz fourth harmonic mixer based on Schottky diode
Author:
Ethical statement:

Affiliation:

Funding:

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
    摘要:

    常温固态太赫兹谐波混频器是太赫兹系统应用中的关键器件。介绍了一款基于肖特基二极管的670 GHz四次谐波混频器的仿真与设计。在高频结构仿真软件(HFSS)中对准垂直结构肖特基势垒变阻二极管进行三维结构建模,采用基于谐波平衡算法的整体综合仿真方法对混频器进行仿真和优化。结果表明:在功率为10 mW的167 GHz本振信号驱动下,混频器单边带变频损耗在637~697 GHz射频频率范围内小于13.8 dB,3 dB变频损耗带宽为60 GHz;最优单边带变频损耗在679 GHz为10.6 dB。

    Abstract:

    The solid-state harmonic mixer is vital to terahertz application system, which directly dominate the system performance. Simulation and design of a 670 GHz fourth harmonic mixer are described based on anti-parallel Schottky barrier diode with quasi-vertical structure. We use integrated simulation method based on harmonic balance algorithm to simulate and optimize the mixer, with the basis on the precise three-dimension model of quasi-vertical built in High Frequency Simulation Simulator (HFSS). Simulated result shows that under the Local Oscillator(LO) power of 10 mW in 167 GHz, the single-sideband conversion loss is less than 13.8 dB between 637-697 GHz of RF frequency. The minimum single sideband conversion loss is 10.6 dB at 679 GHz. The 3 dB conversion loss bandwidth is 60 GHz.

    参考文献
    相似文献
    引证文献
引用本文

纪广玉,张德海,孟 进.基于肖特基二极管的670 GHz四次谐波混频器设计[J].太赫兹科学与电子信息学报,2019,17(4):552~556

复制
分享
文章指标
  • 点击次数:
  • 下载次数:
  • HTML阅读次数:
历史
  • 收稿日期:2018-12-12
  • 最后修改日期:2019-01-23
  • 录用日期:
  • 在线发布日期: 2019-09-05
  • 出版日期: