Based on the 0.5 μm CMOS process, a low-temperature drift bandgap reference source with novel segmentation curvature compensation technology is designed. Two different current compensation structures are adopted to introduce positive temperature coefficient compensation currents in the middle and high temperature phases respectively, so that the temperature characteristic curve of the reference voltage generates two new extreme points in the middle temperature and high temperature phases. Compared with the traditional segmented curvature compensation bandgap reference, the compensation efficiency is improved. The circuit is designed and simulated by Cadence. The simulation results show that when the input voltage is 5 V in -40-190 °C, the output reference voltage is 1.231 V, the temperature drift coefficient is 0.885 ppm/°C, and the Power Supply Rejection Ratio(PSRR) is -75-109 dB at low frequency.