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瞬时剂量率效应激光模拟测试技术
倪 涛1,2, 杜川华3, 曾传滨1,2, 高林春1,2, 王娟娟1,2, 高见头1,2, 赵发展1,2, 罗家俊1,2
1.中国科学院 微电子研究所,北京 100029;2.中国科学院 硅器件技术重点实验室,北京 100029;3.中国工程物理研究院 电子工程研究所,四川 绵阳 621999
摘要:
瞬时剂量率辐射效应模拟测试存在着试验资源有限、环境电磁干扰强、重复性不高等不利因素。本文开发了瞬时剂量率效应脉冲激光模拟测试技术,以1 064 nm激光构建完整精细的剂量率效应地面模拟测试系统。利用此系统开展了不同工艺节点、不同沟道类型、不同衬底形式的瞬时剂量率效应实验研究。仿真实验结果表明相同条件下,体硅器件光电流比绝缘衬底上的硅(SOI)器件大10倍以上,光电流受源漏电压影响也大于SOI器件。
关键词:  剂量率效应  激光模拟  体硅器件  SOI器件
DOI:10.11805/TKYDA2019319
分类号:
基金项目:
Testing technology of laser simulation of transient dose rate effects
NI Tao1,2, DU Chuanhua3, ZENG Chuanbin1,2, GAO Linchun1,2, WANG Juanjuan1,2, GAO Jiantou1,2, ZHAO Fazhan1,2, LUO Jiajun1,2
1.Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;2. Key Laboratory of Science and Technology on Silicon Device,Chinese Academy of Sciences,Beijing 100029,China;3.Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang Sichuan 621999,China
Abstract:
There are some disadvantages in the simulation test of transient dose rate radiation effect, such as limited test resources, strong environmental electromagnetic interference and low repeatability. There are some disadvantages, such as limited test resources, strong electromagnetic interference and low repeatability. In this paper, the pulsed laser simulation test technology of transient dose rate effect is developed, and a complete and fine ground test system is constructed with 1 064 nm laser. The transient dose rate effects of different process nodes, different channel types and different substrates are experimentally studied by using this system. The experimental results show that under the same conditions, the photocurrent of bulk silicon devices is more than 10 times larger than that of Silicon-On-Insulator(SOI), and the photocurrent is more affected by the source-drain voltage than SOI.
Key words:  dose rate effects  laser simulation  bulk silicon devices  SOI devices

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