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微型化太赫兹集成器件的前沿技术进展
Frontier research on micromation and integration of terahertz devices
投稿时间:2014-03-13  修订日期:2014-05-13
中文关键词:太赫兹  共振隧穿二极管  单向载流子传输光电二极管  微纳加工
英文关键词:terahertz  resonant tunneling diode  uni-travelling carrier photodiode  micro and nano fabrication
基金项目:
作者单位
宋瑞良 The 54th Research Institute of China Electronics Technology Group CorporationShijiazhuang Hebei 050081China 
宋 跃 The 54th Research Institute of China Electronics Technology Group CorporationShijiazhuang Hebei 050081China 
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中文摘要:
      针对国际上太赫兹器件技术进展予以概括和分析,提炼出共振隧穿二极管、单向载流子传输光电二极管2种可行的小型化器件方案。在材料生长和器件结构方面分析了太赫兹波的产生原理和难点,在系统应用方面解释了短距离高速通信的实用案例。目前,采用共振隧穿二极管已实现2.5 Gbps速率的300 GHz无线通信演示实验,采用单向载流子传输光电二极管在该频点下实现了12.5 Gbps的无线通信实验。
英文摘要:
      Based on the analysis of new terahertz devices technology development,resonant tunneling diode and uni-travelling carrier photodiode are concluded as the most feasible solutions in terahertz micro-devices. In terms of material growth and device structure, the principle of terahertz source is analyzed, and the short range communication scheme is also explained. Recently, wireless communication experiment at the data rate of 2.5 Gbps@300 GHz based on resonant tunneling diode has been realized, and the experiment at the data rate of 12.5 Gbps@300 GHz based on uni-travelling carrier photodiode has also been completed.
引用本文:宋瑞良,宋 跃.微型化太赫兹集成器件的前沿技术进展[J].太赫兹科学与电子信息学报,2015,13(3):357~360
DOI:10.11805/TKYDA201503.0357
学科分类代码:
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