Abstract:Based on the analysis of new terahertz devices technology development,resonant tunneling diode and uni-travelling carrier photodiode are concluded as the most feasible solutions in terahertz micro-devices. In terms of material growth and device structure, the principle of terahertz source is analyzed, and the short range communication scheme is also explained. Recently, wireless communication experiment at the data rate of 2.5 Gbps@300 GHz based on resonant tunneling diode has been realized, and the experiment at the data rate of 12.5 Gbps@300 GHz based on uni-travelling carrier photodiode has also been completed.