A planar Schottky Barrier Diode(SBD) with the Schottky contact diameter of 1 μm fabricated using electron beam lithography method is reported. The DC measurement results show that the DC series resistance, the junction capacitance and the cut-off frequency of SBD are 10.2 Ω, 1.76 fF and 8.7 THz, respectively; the RF extracted series resistance of 15.4 Ω, the junction capacitance of 1.46 fF and the cut-off frequency of 7 THz are also demonstrated.