The terahertz(THz) frequency band(0.1~10 THz), situated between millimeter waves and infrared light, possesses unique physical characteristics and has become a critical technology in modern communication, imaging, sensing, and security detection. This article summarizes the research progress in terahertz solid-state devices, with a particular focus on the technological development of key circuits such as terahertz solid-state Power Amplifiers(PA), Low-Noise Amplifiers(LNA), frequency multipliers, and mixers. With continuous breakthroughs in materials and processes, terahertz devices have gradually achieved high integration, miniaturization, and low cost, especially with remarkable progress in the application of GaN, InP, and silicon-based technologies. This article also discusses the challenges and future development directions of terahertz solid-state devices, including innovations in material systems, integrated design of devices and circuits, and system optimization.