To study the Single Event Upset(SEU) mechanism in different regions of Integrated Circuits (IC),a SEU mapping system was established on heavy ion micro-beam facility in Beijing HI-13 Tandem Accelerator. It produces micron-resolution maps when single-event upsets occur during ion irradiation of integrated circuits. From these upset maps,the identity and size of a circuit’s upset-prone components can be directly determined. Utilizing this system,a 2 kbit Static Random Access Memory (SRAM)(made in China) SEU map was obtained,which accorded well with the theoretical results and the earlier experiment results.
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史淑廷,郭 刚,王 鼎,刘建成,惠 宁,沈东军,高丽娟,苏秀娣,陆 虹.单粒子翻转二维成像技术[J]. Journal of Terahertz Science and Electronic Information Technology ,2012,10(5):608~612