Ferroelectric memory ionizing radiation effects at different biases
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    Abstract:

    Two types of ferroelectric random memory are irradiated and annealed by 60Co γ-rays. Total Ionizing Dose(TID) failure mechanism of the device is analyzed at different biases. DC,AC and function parameters of the memory are tested through irradiating and annealing by Very Large Scale Integrated circuit(VLSI) test system. The radiation-sensitive parameters are obtained through analyzing the test data. The results show that the functional failure thresholds of ferroelectric memory are different at different biases, because different biases lead to different fragile circuit modules due to irradiation damage.

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张兴尧,郭 旗,李豫东,文 林.不同偏置下铁电存储器总剂量辐射损伤效应[J]. Journal of Terahertz Science and Electronic Information Technology ,2018,16(1):181~185

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History
  • Received:July 06,2015
  • Revised:September 25,2017
  • Adopted:
  • Online: March 06,2018
  • Published: