Cascaded difference-frequency generation for THz in GaP,GaAs and PPLN crystals
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    Abstract:

    Terahertz(THz) generation by periodically poled Gallium Phosphide(GaP) crystal, periodically poled Gallium Arsenide(GaAs) crystal, and Periodically Poled Lithium Niobate(PPLN) crystal based on Quasi-Phase-Matched(QPM) cascaded Difference-Frequency Generation(DFG) is studied. Compared to DFG, THz power in cascading processes increase by 9.5 times, the cascading process contributes to efficient THz generation. The wave vector mismatch, polarization period and terahertz power of three crystals are calculated from the coupled wave equations, and the results are compared. The results show that terahertz power generated by GaP crystal is slightly higher than that generated by GaAs crystal. The polarization period of GaAs crystal is the smallest; so are the wave vector mismatch and polarization period range of PPLN crystal, however, its conversion efficiency is the highest. A widely tunable laser source system based on the general theory of QPM in MgO:PPLN crystal has been developed. Through analyzing the absorption factor on its output of the terahertz power in theory, the conversion efficiency of cascaded DFG is obtained. The infrared radiation is produced from cascading orders 15 with a maximum power of 3.72 MW. A maximum output conversion efficiency of 3.72% is generated. The research shows significance in experiments on cascaded DFG for terahertz radiation using periodically polarized GaP, periodically polarized GaAs and PPLN crystals.

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黄俊滔,饶志明,谢芳森. GaP, GaAs和PPLN晶体级联差频产生太赫兹辐射[J]. Journal of Terahertz Science and Electronic Information Technology ,2018,16(4):576~583

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History
  • Received:October 22,2017
  • Revised:December 07,2017
  • Adopted:
  • Online: September 04,2018
  • Published: