High performance electrically modulators based on silicon microstructure with VO2 films for terahertz applications
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    Abstract:

    An electronically controlled terahertz amplitude modulation device is designed and implemented by integrating silicon-based microstructure with vanadium dioxide phase-change film. This device has a high transmittance of terahertz waves and very low insertion loss of the device, while having a large operating bandwidth and modulation depth. Simulation and experimental results show that the modulator's response bandwidth for the increased transmission effect of terahertz waves is 0.25-0.95 THz. The transmission of the modulator is over 80% in the frequency range of 0.4-0.85 THz, and compared with the transmission of high resistance silicon wafer, it is increased by over 10%. And the transmittance of the modulator can be up to 85%. After the device is electrically controlled, the modulation depth can reach more than 76%,and the change range of the modulator's transmittance can reach 65%. An important application value of the THz modulator is demonstrated in terahertz imaging and communication system, because of its low insertion loss, large modulation amplitude and wide working bandwidth.

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代朋辉,唐亚华,杨青慧,张怀武,文岐业.基于硅基微结构高性能太赫兹波电控调制器[J]. Journal of Terahertz Science and Electronic Information Technology ,2019,17(1):29~34

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History
  • Received:February 03,2018
  • Revised:March 07,2018
  • Adopted:
  • Online: March 27,2019
  • Published: