A scalable non-linear compact model applied to HEMT devices
Author:
Affiliation:

Funding:

Ethical statement:

  • Article
  • |
  • Figures
  • |
  • Metrics
  • |
  • Reference
  • |
  • Related
  • |
  • Cited by
  • |
  • Materials
    Abstract:

    A scalable Enterprise Edition High Electron Mobility Transistor(EE-HEMT) based non-linear model is presented. One dimensional function fitting as well as binary surface fitting methods are employed to rectify the original ideal scaling routines of EE-HEMT model, which makes this new model scale with device dimension and temperature more precisely and capable of predicting the Direct Current(DC) I-U,S-parameters and large signal performance. The accuracy of the model has been proved by comparing the simulation results with the measurement data of a 0.25 μm GaAs pHEMT process under different ambient temperatures for various device dimensions.

    Reference
    Related
    Cited by
Get Citation

陈勇波,刘 文,汪昌思,孔 欣,赵 佐.一种HEMT器件可缩放的非线性紧凑模型[J]. Journal of Terahertz Science and Electronic Information Technology ,2019,17(1):162~168

Copy
Share
Article Metrics
  • Abstract:
  • PDF:
  • HTML:
History
  • Received:August 31,2018
  • Revised:November 12,2018
  • Adopted:
  • Online: March 27,2019
  • Published: