A scalable Enterprise Edition High Electron Mobility Transistor(EE-HEMT) based non-linear model is presented. One dimensional function fitting as well as binary surface fitting methods are employed to rectify the original ideal scaling routines of EE-HEMT model, which makes this new model scale with device dimension and temperature more precisely and capable of predicting the Direct Current(DC) I-U,S-parameters and large signal performance. The accuracy of the model has been proved by comparing the simulation results with the measurement data of a 0.25 μm GaAs pHEMT process under different ambient temperatures for various device dimensions.
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陈勇波,刘 文,汪昌思,孔 欣,赵 佐.一种HEMT器件可缩放的非线性紧凑模型[J]. Journal of Terahertz Science and Electronic Information Technology ,2019,17(1):162~168