Hole Injection Layer(HIL) plays a key role in Quantum dot-based Light Emitting Diodes (QLEDs). Herein, MoOx nanoparticles are prepared with a solution method under low temperature, next they are coated on the surface of Indium Tin Oxide(ITO) substrate by means of spin casting with following anneal under different temperatures, and then used as HILs to fabricate QLEDs. The experimental results show that the energy level of MoOx film is matched to those of the ITO and Poly-TPD, and MoOx is suitable to be used as HIL for QLEDs. By analyzing the performance of all the fabricated devices, it can be concluded that the QLEDs, corresponding to the MoOx film annealed under 100 ℃, exhibits the best turn-on voltage, External Quantum Efficiency(EQE) and brightness. In detail, this device has a low turn-on voltage of 2.5 V, a high EQE of 11.6%, and the highest brightness of 27 100 cd/m2 at 10 V.